ss2 75 cmos omnipolar high sensitivity micropower hall switch 1 v 3.1 0 nov 1, 201 3 features ? solid - state reliability much better than reed switch ? omnipolar, output switches with absolute value of north or south pole from magnet ? wide operating voltage range from 3.5v to 24v ? high sensitivity for direct reed switch replac e- ment applications applications ? solid state switch ? speed detection ? interrupter ? magnet proximity sensor for reed switch r e- placement 3 pin sot23 (suffix so) 3 pin sip (suffix ua) general description the ss275 omnipolar hall eff ect sensor ic is fabr i- cated from mixed signal cmos technology .it inco r- porates advanced chopper - stabilization techniques to provide accurate and stable magnetic switch points. the output transistor of the ss275 will be latched on (b op ) in the presence of a sufficiently strong south or north magnetic field facing the marked side of the package. the output will be latched off (b rp ) in the absence of a magnetic field. the chopper stabilized amplifier uses switched capa c- itor techniques to eliminate the amplifie r offset vol t- age, which, in bipolar devices, is a major source of temperature sensitive drift. cmos makes this a d- vanced technique possible. the cmos chip is also much smaller than a bipolar chip, allowing very s o- phisticated circuitry to be placed in less s pace. the small chip size also contributes to lower physical stress and less power consumption. functional block diagram
ss2 75 cmos omnipolar high sensitivity micropower hall switch 2 v 3.1 0 nov 1, 201 3 glossary of terms ? millitesla (mt), gauss units of magnetic flux density: 1mt = 10 gauss ? rohs restriction of hazardous substances ? esd electro - static discharge ? operating point (b op ) magnetic flux density applied on the branded side of the package which turns the output driver on (v out = v dson ) ? release point (b rp ) magnetic flux density appli ed on the branded side of the package which turns the output driver off (v out = high) pin definitions and descriptions sot p i n sip pi n na m e t y pe f un c t i o n 1 1 v dd s upply s upply v oltage pin 2 3 out output open d r ain output pin 3 2 gnd g r ound g r ound pin absolute maximum ratings parameter symbol va l ue units supply voltage(operating) v dd 28 v supply current i dd 5 ma outpu t voltage v out 28 v output curent i out 10 ma operating temperature range t a - 40 to 150 c storage temperature rang t s - 50 to 1 65 c esd sensitivity - 4000 v exceeding the absolute maximum ratings may cause permanent damage. exposure to absolute - maximu m rated conditions for e x- tended periods may affect device reliability.
ss2 75 cmos omnipolar high sensitivity micropower hall switch 3 v 3.1 0 nov 1, 201 3 dc electrical characteristics dc operating parameters: t a = 25 c , v dd = 5 v. parameter symbol test conditions min typ max units operating voltage v dd operating 3.5 24 v supply curren t i dd b < b rp 5 m a output saturation vol t- age v dson i out = 20ma, b > b op 0.5 v output leakage current i off b < brp v out = 24v 1 10 a output rise time tr r l = 1k ?, c l = 20pf 0.25 s output fall time tf r l = 1k ?, c l = 20pf 0.25 s maximum switc hing frequency fsw --- 10 khz package thermal r e- sistance r th single layer (1s) jedec board 301 c/w operating parameters: t a = 25 c , v dd = 5 vdc. parameter symbol min type max units operating point bop - +/ - 35 +/ - 60 gs release point brp +/ - 10 +/ - 20 - gs hysteresis bhys - 15 - gs esd protection human body model (hbm) tests according to: mil. std. 883f method 3015.7 parameter symbol limit values unit notes min max esd voltage v esd 2 4 kv esd precautions electronic semiconductor products are sensitive to electro static discharge (esd). always observe electro static discharge control procedures whenever handling semiconductor products.
ss2 75 cmos omnipolar high sensitivity micropower hall switch 4 v 3.1 0 nov 1, 201 3 installation comments consider temperature coefficients of hall ic and magnetics , as well as air gap a nd life time variations. observe temperature limits during wave soldering. typical ir solder - reflow profile: ? no rapid heating and cooling. ? recommended preheating for max. 2minutes at 150 c ? recommended reflowing for max. 5seconds at 240 c application informatio it is strongly recommended that an external bypass capacitor be connected (in close proximity to the hall sensor) between the supply (v dd pin) and ground (gnd pin) of the device to reduce both external noise and noise gene r- ated by the chopper stabilization technique. as is shown in the following two figures, a 0.1f capacitor is typical. for reverse voltage protection, it is recommended to connect a resistor or a diode in series with the v dd pin. when using a resistor, three points are important: - the resistor has to limit the reverse current to 50ma maximum (v cc / r1 50ma) - the resulting device supply voltage v dd has to be higher than v dd min (v dd = v cc ? r1*i dd ) - the resist or has to withstand the power dissipated in reverse voltage condition (pd = v cc 2/r1) when using a diode, a reverse current cannot flow and the voltage drop is almost constant ( 0.7v). therefore, a 100 ?/0.25w resistor for 5v application and a diode for high er supply voltage are recommended. when a weak power supply is used or when the device is intended to be used in noisy environment, it is reco m- mended that the second figure is used. the low - pass filter formed by r1 and c1 and the z ener diode z1 bypass the disturbances or voltage spikes occu r- ring on the device supply voltage v dd . the diode d1 provides additional reverse voltage protection. both sol u- tions provide the required reverse voltage protection. ss275 r2 10k c2 4.7n vdd gnd out c1 100n ss275 r1:100 r2 10k c2 4.7n vdd gnd out c1 100 z1 d1 automotive and severe environment protection circuit typical three - wire application circ uit
ss2 75 cmos omnipolar high sensitivity micropower hall switch 5 v 3.1 0 nov 1, 201 3 package information package so t , 3- pin sot - 23: sot - 23 package hall location 0.56 0.66 0.95 0.80 1.50 1.40 chip 3 2 1 bottom view of sot - 23 package 2.70 3.10 1.00 1.30 0.70 0.90 0.00 0.10 0.35 0.50 0.10 0.25 0.20 min 2.60 3.00 1.50 1.80 1.70 2.10 3 2 1 top view side view end view notes: 1). pin out: pin 1 v dd pin 2 output pin 3 gnd 2). all dimensions are in millimeters ;
ss2 75 cmos omnipolar high sensitivity micropower hall switch 6 v 3.1 0 nov 1, 201 3 package ua, 3 - pin sip: ordering i n formation part no. pb - free temperature code package code packing ss275 esot yes - 40c to 85c sot - 23 7- in. reel, 3000 pieces/ reel ss275 eua yes - 40c to 85c to - 92 bulk, 1000 pieces/ bag ss275 ksot yes - 40c to 125c sot - 23 7- in. reel, 3000 pieces/ reel ss275 kua yes - 40c to 125c to - 92 bulk, 1000 pieces/ bag ss275 lsot yes - 40c to 150c sot - 23 7- in. reel, 3000 pieces/ reel ss275 lua yes - 40c to 150c to - 92 bulk, 1000 pieces/ bag 4.0 0.01 1 2 3 1.27 2.13 1.87 1.00 1.20 45 1 1.52 0.1 3 1 0.75 0.05 3.0 0.01 0.44 0.01 0.05 0.05 1.6. 0.1 0.84(nom) 3 1 6 1 6 1 3 1 14 .5 1 active area depth: sensor location 1 2 3 notes: 1). controlling dimension : mm ; 2). le a ds must be free of flash and plating voids ; 3). do not bend leads within 1 mm of lead to package interface ; 4). pinout: pin 1 v dd pin 2 gnd pin 3 outpu t 0.39 0.01 0.38 0. 01 2.54
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